Infineon HEXFET Type N-Channel MOSFET, 150 A, 20 V Enhancement, 2-Pin DirectFET

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37 737,60 kr

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47 174,40 kr

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RS-artikelnummer:
222-4736
Tillv. art.nr:
IRF6620TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

150A

Maximum Drain Source Voltage Vds

20V

Series

HEXFET

Package Type

DirectFET

Mount Type

Surface

Pin Count

2

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

28nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

89W

Maximum Gate Source Voltage Vgs

20 V

Height

0.68mm

Width

5.05 mm

Standards/Approvals

No

Length

6.35mm

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

100% Rg tested Low Conduction and Switching Losses

Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters

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