Infineon CoolMOS Type N-Channel MOSFET, 109 A, 600 V Enhancement, 4-Pin TO-247

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3 398,97 kr

(exkl. moms)

4 248,72 kr

(inkl. moms)

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  • Dessutom levereras 90 enhet(er) från den 29 december 2025
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30 - 30113,299 kr3 398,97 kr
60 +107,636 kr3 229,08 kr

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RS-artikelnummer:
222-4726
Tillv. art.nr:
IPZ60R017C7XKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

109A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS

Package Type

TO-247

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

17mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

240nC

Maximum Power Dissipation Pd

446W

Maximum Operating Temperature

150°C

Height

21.1mm

Length

16.13mm

Width

5.21 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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