Infineon CoolMOS Type N-Channel MOSFET, 1.9 A, 80 V Enhancement, 3-Pin TO-252

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8 197,50 kr

(exkl. moms)

10 247,50 kr

(inkl. moms)

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2500 +3,279 kr8 197,50 kr

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RS-artikelnummer:
222-4674
Tillv. art.nr:
IPD80R2K8CEATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-252

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.8Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

42W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

12nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

2.41mm

Standards/Approvals

No

Width

6.22 mm

Length

6.73mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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