Infineon CoolMOS P7 Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R3K3P7ATMA1
- RS-artikelnummer:
- 214-9051
- Tillv. art.nr:
- IPD80R3K3P7ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
152,975 kr
(exkl. moms)
191,225 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 5 000 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 100 | 6,119 kr | 152,98 kr |
| 125 - 225 | 5,81 kr | 145,25 kr |
| 250 - 600 | 5,569 kr | 139,23 kr |
| 625 - 1225 | 5,331 kr | 133,28 kr |
| 1250 + | 4,955 kr | 123,88 kr |
*vägledande pris
- RS-artikelnummer:
- 214-9051
- Tillv. art.nr:
- IPD80R3K3P7ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS P7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.3Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 18W | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS P7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.3Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 18W | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 2.41mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs. These are recommended for hard and soft switching fly back topologies for LED Lighting, low power Chargers and Adapters, Audio, AUX power and Industrial power.
It comes with Fully optimized portfolio
Integrated Zener Diode ESD protection
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