Infineon CoolMOS P7 Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin TO-252

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Antal (1 rulle med 2500 enheter)*

6 155,00 kr

(exkl. moms)

7 695,00 kr

(inkl. moms)

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  • Dessutom levereras 5 000 enhet(er) från den 19 januari 2026
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2500 +2,462 kr6 155,00 kr

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RS-artikelnummer:
214-9050
Tillv. art.nr:
IPD80R3K3P7ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

800V

Series

CoolMOS P7

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.3Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

5.8nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

18W

Maximum Operating Temperature

150°C

Width

6.22 mm

Height

2.41mm

Length

6.73mm

Standards/Approvals

No

Automotive Standard

No

The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs. These are recommended for hard and soft switching fly back topologies for LED Lighting, low power Chargers and Adapters, Audio, AUX power and Industrial power.

It comes with Fully optimized portfolio

Integrated Zener Diode ESD protection

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