Infineon OptiMOS Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L08ATMA2
- RS-artikelnummer:
- 222-4666
- Tillv. art.nr:
- IPD50N06S4L08ATMA2
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 15 enheter)*
136,53 kr
(exkl. moms)
170,67 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 11 625 enhet(er) levereras från den 13 februari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 15 - 60 | 9,102 kr | 136,53 kr |
| 75 - 135 | 8,647 kr | 129,71 kr |
| 150 - 360 | 8,288 kr | 124,32 kr |
| 375 - 735 | 7,922 kr | 118,83 kr |
| 750 + | 7,377 kr | 110,66 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4666
- Tillv. art.nr:
- IPD50N06S4L08ATMA2
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 71W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 71W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 2.3mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
Relaterade länkar
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD50N06S409ATMA2
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L12ATMA2
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD60N10S4L12ATMA1
- Infineon OptiMOS Type N-Channel MOSFET & Diode 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252