Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 80 A, 100 V Enhancement, 3-Pin TO-263 IPB065N10N3GATMA1
- RS-artikelnummer:
- 220-7383
- Tillv. art.nr:
- IPB065N10N3GATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
154,58 kr
(exkl. moms)
193,225 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 865 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 5 | 30,916 kr | 154,58 kr |
| 10 - 95 | 28,292 kr | 141,46 kr |
| 100 - 245 | 26,164 kr | 130,82 kr |
| 250 - 495 | 24,26 kr | 121,30 kr |
| 500 + | 23,632 kr | 118,16 kr |
*vägledande pris
- RS-artikelnummer:
- 220-7383
- Tillv. art.nr:
- IPB065N10N3GATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.5mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.5mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and figure of merit.
Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
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