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Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1

RS-artikelnummer:: 219-5995
Tillv. art.nr:: IPD95R2K0P7ATMA1
Tillverkare / varumärke:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1

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Antal (1 förpackning med 15 enheter)*

161,97 kr

(exkl. moms)

202,47 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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7 365 enhet(er) levereras från den 29 december 2025

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Enheter	Per enhet	Per förpackning*
15 - 60	10,798 kr	161,97 kr
75 - 135	10,259 kr	153,89 kr
150 - 360	9,826 kr	147,39 kr
375 - 735	9,401 kr	141,02 kr
750 +	8,751 kr	131,27 kr

*vägledande pris

RS-artikelnummer:: 219-5995
Tillv. art.nr:: IPD95R2K0P7ATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	950V
	Series	CoolMOS P7
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	37W
	Typical Gate Charge Qg @ Vgs	10nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	6.22 mm
	Height	2.41mm
	Length	6.73mm
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 950V
	Series CoolMOS P7
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 37W
	Typical Gate Charge Qg @ Vgs 10nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 6.22 mm
	Height 2.41mm
	Length 6.73mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD95R2K0P7ATMA1

The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1

GRATIS leverans för online beställningar över 500,00 kr

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