Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 219-5990
- Tillv. art.nr:
- IPA95R1K2P7XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
595,85 kr
(exkl. moms)
744,80 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 100 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 11,917 kr | 595,85 kr |
| 100 - 200 | 9,533 kr | 476,65 kr |
| 250 - 450 | 8,938 kr | 446,90 kr |
| 500 - 950 | 8,223 kr | 411,15 kr |
| 1000 + | 7,627 kr | 381,35 kr |
*vägledande pris
- RS-artikelnummer:
- 219-5990
- Tillv. art.nr:
- IPA95R1K2P7XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.
Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
relaterade länkar
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-220 IPA95R1K2P7XKSA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin SOT-223 IPN95R1K2P7ATMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 950 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS P7 SJ Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 950 V Enhancement, 3-Pin TO-251 IPU95R2K0P7AKMA1
