Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 950 V Enhancement, 3-Pin TO-252

Antal (1 rulle med 2500 enheter)*

12 250,00 kr

(exkl. moms)

15 300,00 kr

(inkl. moms)

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  • Dessutom levereras 5 000 enhet(er) från den 29 december 2025
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2500 +4,90 kr12 250,00 kr

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RS-artikelnummer:
219-5994
Tillv. art.nr:
IPD95R2K0P7ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

950V

Package Type

TO-252

Series

CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

10nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

37W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

6.22 mm

Height

2.41mm

Length

6.73mm

Automotive Standard

No

The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

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