Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin TO-220 IPA95R1K2P7XKSA1

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117,21 kr

(exkl. moms)

146,51 kr

(inkl. moms)

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  • Dessutom levereras 140 enhet(er) från den 29 december 2025
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Enheter
Per enhet
Per förpackning*
10 - 4011,721 kr117,21 kr
50 - 9011,144 kr111,44 kr
100 - 24010,662 kr106,62 kr
250 - 49010,192 kr101,92 kr
500 +9,498 kr94,98 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
219-5991
Tillv. art.nr:
IPA95R1K2P7XKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

950V

Package Type

TO-220

Series

CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

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