Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263
- RS-artikelnummer:
- 218-3032
- Tillv. art.nr:
- IPB120N06S4H1ATMA2
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 1000 enheter)*
19 934,00 kr
(exkl. moms)
24 918,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 30 mars 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 1000 + | 19,934 kr | 19 934,00 kr |
*vägledande pris
- RS-artikelnummer:
- 218-3032
- Tillv. art.nr:
- IPB120N06S4H1ATMA2
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS-T2 | |
| Package Type | TO-263 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS-T2 | ||
Package Type TO-263 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.
N-channel - Enhancement mode
175°C operating temperature
100% Avalanche tested
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