Sök efter MPN

Infineon Dual HEXFET 1 Type N-Channel MOSFET, 6.6 A, 20 V Enhancement, 8-Pin SO-8 IRF7311TRPBF

RS-artikelnummer:: 215-2583
Tillv. art.nr:: IRF7311TRPBF
Tillverkare / varumärke:: Infineon

Infineon Dual HEXFET 1 Type N-Channel MOSFET, 6.6 A, 20 V Enhancement, 8-Pin SO-8 IRF7311TRPBF

Mängdrabatt möjlig

Antal (1 förpackning med 20 enheter)*

204,42 kr

(exkl. moms)

255,52 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Tillfälligt slut

Leverans från den 04 januari 2027

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet	Per förpackning*
20 - 80	10,221 kr	204,42 kr
100 - 180	9,716 kr	194,32 kr
200 - 480	9,307 kr	186,14 kr
500 - 980	8,899 kr	177,98 kr
1000 +	8,283 kr	165,66 kr

*vägledande pris

RS-artikelnummer:: 215-2583
Tillv. art.nr:: IRF7311TRPBF
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6.6A
	Maximum Drain Source Voltage Vds	20V
	Series	HEXFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	29mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	18nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	12 V
	Forward Voltage Vf	0.72V
	Maximum Power Dissipation Pd	2W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Height	1.5mm
	Length	5mm
	Width	4 mm
	Standards/Approvals	No
	Number of Elements per Chip	1
	Automotive Standard	No
	Distrelec Product Id	304-39-415

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6.6A
	Maximum Drain Source Voltage Vds 20V
	Series HEXFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 29mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 18nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 12 V
	Forward Voltage Vf 0.72V
	Maximum Power Dissipation Pd 2W
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Height 1.5mm
	Length 5mm
	Width 4 mm
	Standards/Approvals No
	Number of Elements per Chip 1
	Automotive Standard No
	Distrelec Product Id 304-39-415

Datasheet - IRF7311TRPBF

The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With this improvement multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared for Wave soldering techniques.

Generation V technology

Ultra low on resistance

Surface mount

Fully avalanche rated

Dual N-channel MOSFET

Infineon Dual HEXFET 1 Type N-Channel MOSFET, 6.6 A, 20 V Enhancement, 8-Pin SO-8 IRF7311TRPBF

GRATIS leverans för online beställningar över 500,00 kr

relaterade länkar