Infineon Dual HEXFET 1 Type N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8

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RS-artikelnummer:
215-2587
Tillv. art.nr:
IRF8734TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

20nC

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Width

4 mm

Length

5mm

Height

1.5mm

Standards/Approvals

RoHS

Number of Elements per Chip

1

Automotive Standard

No

The Infineon HEXFET Power MOSFET series has 30V maximum drain source voltage in a SO-8 package. It has application as Synchronous MOSFET for Notebook Processor Power and Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems.

Low Gate Charge

Fully Characterized Avalanche Voltage and Current

100% Tested for RG

Lead-Free

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