Infineon Dual HEXFET 1 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SO-8

Se alla MOSFETs
För närvarande inte tillgänglig
Vi vet inte om den här artikeln kommer tillbaka i lager, RS har för avsikt att ta bort den från vårt utbud snart.
RS-artikelnummer:
222-4607
Tillv. art.nr:
AUIRF7103QTR
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

50V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

10nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Standards/Approvals

No

Width

4 mm

Height

1.5mm

Length

5mm

Number of Elements per Chip

1

Automotive Standard

AEC-Q101

The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Advanced Planar Technology

Dual N Channel MOSFET Low On-Resistance

Logic Level Gate Drive

relaterade länkar