Infineon HEXFET Type N-Channel MOSFET, 19 A, 200 V Enhancement, 7-Pin DirectFET IRF6785MTRPBF
- RS-artikelnummer:
- 215-2581
- Tillv. art.nr:
- IRF6785MTRPBF
- Tillverkare / varumärke:
- Infineon
Antal (1 förpackning med 10 enheter)*
195,69 kr
(exkl. moms)
244,61 kr
(inkl. moms)
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- Dessutom levereras 4 370 enhet(er) från den 19 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 + | 19,569 kr | 195,69 kr |
*vägledande pris
- RS-artikelnummer:
- 215-2581
- Tillv. art.nr:
- IRF6785MTRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET Power MOSFET has 200V maximum drain source voltage in a DirectFET MZ package rated at 19 amperes optimized with low on resistance. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6785MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic inductance and resistance when compared to conventional wire bonded SOIC packaging.
Latest MOSFET Silicon technology
Key parameters optimized for Class-D audio amplifier applications
Dual sided cooling compatible
Lead-Free (Qualified up to 260°C Reflow)
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