Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-252 IPD70R600P7SAUMA1

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136,725 kr

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170,90 kr

(inkl. moms)

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25 +5,469 kr136,73 kr

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Förpackningsalternativ:
RS-artikelnummer:
215-2509
Tillv. art.nr:
IPD70R600P7SAUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.5A

Maximum Drain Source Voltage Vds

700V

Series

700V CoolMOS P7

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

10.5W

Typical Gate Charge Qg @ Vgs

10.5nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon 700V Cool MOS™ P7 super junction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to super junction technologies used today. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs. The latest CoolMOS™P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Extremely low losses due to very low FOMRDS(on)*Qg and RDS(on)*Eoss

Excellent thermal behaviour

Integrated ESD protection diode

Low switching losses (Eoss)

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