Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-220 IPAN70R360P7SXKSA1
- RS-artikelnummer:
- 215-2489
- Tillv. art.nr:
- IPAN70R360P7SXKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
323,38 kr
(exkl. moms)
404,22 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 460 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 20 | 16,169 kr | 323,38 kr |
| 40 - 80 | 15,361 kr | 307,22 kr |
| 100 - 180 | 14,714 kr | 294,28 kr |
| 200 - 480 | 14,067 kr | 281,34 kr |
| 500 + | 13,097 kr | 261,94 kr |
*vägledande pris
- RS-artikelnummer:
- 215-2489
- Tillv. art.nr:
- IPAN70R360P7SXKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | 700V CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 16.4nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 26.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series 700V CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 16.4nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 26.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 700V Cool MOS™ P7 super junction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to super junction technologies used today. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs. The latest CoolMOS™P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Extremely low losses due to very low FOMRDS(on)*Qg and RDS(on)*Eoss
Excellent thermal behaviour
Integrated ESD protection diode
Low switching losses (Eoss)
relaterade länkar
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin IPAK
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin IPAK IPSA70R360P7SAKMA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-252
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223 IPN70R360P7SATMA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-252 IPD70R360P7SAUMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220