Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 6.5 A, 700 V Enhancement, 3-Pin TO-220

Mängdrabatt möjlig

Antal (1 rör med 50 enheter)*

186,70 kr

(exkl. moms)

233,40 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 250 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per Rør*
50 - 503,734 kr186,70 kr
100 - 2003,633 kr181,65 kr
250 - 4503,537 kr176,85 kr
500 - 12003,445 kr172,25 kr
1250 +3,36 kr168,00 kr

*vägledande pris

RS-artikelnummer:
215-2483
Tillv. art.nr:
IPA70R750P7SXKSA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-220

Series

700V CoolMOS P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

750mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

21.2W

Typical Gate Charge Qg @ Vgs

8.3nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon 700V Cool MOS™ P7 super junction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to super junction technologies used today. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs. The latest CoolMOS™P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

Extremely low losses due to very low FOMRDS(on)*Qg and RDS(on)*Eoss

Excellent thermal behaviour

Integrated ESD protection diode

Low switching losses (Eoss)

relaterade länkar