Infineon CoolMOS CE Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-251

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Antal (1 rör med 75 enheter)*

490,275 kr

(exkl. moms)

612,825 kr

(inkl. moms)

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  • Dessutom levereras 1 200 enhet(er) från den 29 december 2025
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75 +6,537 kr490,28 kr

*vägledande pris

RS-artikelnummer:
214-9102
Tillv. art.nr:
IPS60R800CEAKMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-251

Series

CoolMOS CE

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

17.2nC

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

74W

Maximum Operating Temperature

150°C

Length

6.73mm

Standards/Approvals

No

Height

6.22mm

Width

2.4 mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive

Very high commutation ruggedness

Qualified for standard grade applications

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