Infineon Dual N Channel Logic Level Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin
- RS-artikelnummer:
- 214-9062
- Tillv. art.nr:
- IPG20N06S4L11AATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
153,66 kr
(exkl. moms)
192,08 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 14 760 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 15,366 kr | 153,66 kr |
| 50 - 90 | 14,594 kr | 145,94 kr |
| 100 - 240 | 13,978 kr | 139,78 kr |
| 250 - 490 | 13,384 kr | 133,84 kr |
| 500 + | 12,443 kr | 124,43 kr |
*vägledande pris
- RS-artikelnummer:
- 214-9062
- Tillv. art.nr:
- IPG20N06S4L11AATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS-T2 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 65W | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Transistor Configuration | Dual N Channel Logic Level Enhancement Mode | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Width | 5.9 mm | |
| Standards/Approvals | RoHS, MSL1, AEC Q101 | |
| Length | 5.15mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS-T2 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 65W | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Transistor Configuration Dual N Channel Logic Level Enhancement Mode | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Width 5.9 mm | ||
Standards/Approvals RoHS, MSL1, AEC Q101 | ||
Length 5.15mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Logic Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.
The product is AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
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