Infineon HEXFET Type N-Channel MOSFET, 56 A, 100 V, 3-Pin TO-252 IRFR3710ZTRLPBF
- RS-artikelnummer:
- 214-4457
- Tillv. art.nr:
- IRFR3710ZTRLPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 15 enheter)*
221,58 kr
(exkl. moms)
276,975 kr
(inkl. moms)
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- Dessutom levereras 2 220 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 15 - 15 | 14,772 kr | 221,58 kr |
| 30 - 60 | 14,037 kr | 210,56 kr |
| 75 - 135 | 13,445 kr | 201,68 kr |
| 150 - 360 | 12,854 kr | 192,81 kr |
| 375 + | 11,965 kr | 179,48 kr |
*vägledande pris
- RS-artikelnummer:
- 214-4457
- Tillv. art.nr:
- IRFR3710ZTRLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Maximum Power Dissipation Pd | 140W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Maximum Power Dissipation Pd 140W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
Its design is extremely efficient and reliable
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