Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23 BSS7728NH6327XTSA2

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191,00 kr

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238,80 kr

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200 - 2000,955 kr191,00 kr
400 - 8000,907 kr181,40 kr
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2000 - 48000,831 kr166,20 kr
5000 +0,669 kr133,80 kr

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Förpackningsalternativ:
RS-artikelnummer:
214-4337
Tillv. art.nr:
BSS7728NH6327XTSA2
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200mA

Maximum Drain Source Voltage Vds

60V

Series

SIPMOS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

1nC

Maximum Power Dissipation Pd

0.36W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

1.4 mm

Height

1.12mm

Length

3.04mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

This Infineon SIPMOS Small signal MOSFETis ideally suited for space-constrained automotive and/or non-automotive applications. They can be found in almost all applications e.g. battery protection, battery charging, LED lighting and so on.

It is Halogen-free according to IEC61249-2-21

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