Infineon OptiMOS 5 Type N-Channel MOSFET, 56 A, 150 V N, 8-Pin SuperSO BSC160N15NS5ATMA1
- RS-artikelnummer:
- 214-4330
- Tillv. art.nr:
- BSC160N15NS5ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
92,86 kr
(exkl. moms)
116,08 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 540 enhet(er) är redo att levereras
- Dessutom levereras 5 000 enhet(er) från den 25 juni 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 10 | 9,286 kr | 92,86 kr |
| 20 - 40 | 8,837 kr | 88,37 kr |
| 50 - 90 | 8,456 kr | 84,56 kr |
| 100 - 240 | 8,075 kr | 80,75 kr |
| 250 + | 7,526 kr | 75,26 kr |
*vägledande pris
- RS-artikelnummer:
- 214-4330
- Tillv. art.nr:
- BSC160N15NS5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS 5 | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.35mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Width | 6.1 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS 5 | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 5.35mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Width 6.1 mm | ||
Automotive Standard No | ||
This Infineon OptiMOS MOSFET offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
It is ideal for hot-swap and e-fuse applications
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