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Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-247

RS-artikelnummer:: 210-4987
Tillv. art.nr:: SiHG186N60EF-GE3
Tillverkare / varumärke:: Vishay

Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-247

Mängdrabatt möjlig

Antal (1 rör med 25 enheter)*

581,275 kr

(exkl. moms)

726,60 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Sista RS lager

Slutlig(a) 300 enhet(er), redo att levereras

Enheter	Per enhet	Per Rør*
25 - 25	23,251 kr	581,28 kr
50 - 100	21,858 kr	546,45 kr
125 - 225	19,761 kr	494,03 kr
250 - 600	18,69 kr	467,25 kr
625 +	18,225 kr	455,63 kr

*vägledande pris

RS-artikelnummer:: 210-4987
Tillv. art.nr:: SiHG186N60EF-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8.4A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-247
	Series	EF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	168mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	21nC
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	156W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	33.91mm
	Width	15.29 mm
	Height	4.58mm
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8.4A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-247
	Series EF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 168mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 21nC
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 156W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 33.91mm
	Width 15.29 mm
	Height 4.58mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - SiHG186N60EF-GE3

The Vishay EF Series Power MOSFET With Fast Body Diode has TO-247AC package type.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-247

GRATIS leverans för online beställningar över 500,00 kr

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