Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET, 60 A, 25 V Enhancement, 8-Pin PowerPAK 1212
- RS-artikelnummer:
- 188-4999
- Tillv. art.nr:
- SISF02DN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
117,60 kr
(exkl. moms)
147,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 15 juli 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 23,52 kr | 117,60 kr |
| 50 - 120 | 20,026 kr | 100,13 kr |
| 125 - 245 | 16,42 kr | 82,10 kr |
| 250 - 495 | 13,686 kr | 68,43 kr |
| 500 + | 10,864 kr | 54,32 kr |
*vägledande pris
- RS-artikelnummer:
- 188-4999
- Tillv. art.nr:
- SISF02DN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | TrenchFET Gen IV | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 69.4W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Common Drain | |
| Length | 3.4mm | |
| Width | 3.4 mm | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series TrenchFET Gen IV | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 69.4W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Common Drain | ||
Length 3.4mm | ||
Width 3.4 mm | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Common Drain Dual N-Channel 25 V (S1-S2) MOSFET.
TrenchFET® Gen IV power MOSFET
Very low source-to-source on resistance
Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package
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