Vishay TrenchFET Type N-Channel MOSFET, 9.5 A, 80 V Enhancement, 8-Pin SO-8 SI4896DY-T1-E3

RS-artikelnummer:: 180-7961
Tillv. art.nr:: SI4896DY-T1-E3
Tillverkare / varumärke:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 9.5 A, 80 V Enhancement, 8-Pin SO-8 SI4896DY-T1-E3

Antal (1 förpackning med 5 enheter)*

99,99 kr

(exkl. moms)

124,99 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Tillfälligt slut

Leverans från den 03 september 2026

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet	Per förpackning*
5 +	19,998 kr	99,99 kr

*vägledande pris

RS-artikelnummer:: 180-7961
Tillv. art.nr:: SI4896DY-T1-E3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9.5A
	Maximum Drain Source Voltage Vds	80V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	34nC
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.56W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	1.75mm
	Standards/Approvals	No
	Length	5mm
	Width	6.2 mm
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9.5A
	Maximum Drain Source Voltage Vds 80V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 34nC
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.56W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 1.75mm
	Standards/Approvals No
	Length 5mm
	Width 6.2 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 16.5mohm at a gate-source voltage of 10V. It has power dissipation of 1.56W and continuous drain current of 6.7A. The minimum and a maximum driving voltage for this MOSFET is 6V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switch

• Load switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21