Vishay TrenchFET Type N-Channel Power MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8
- RS-artikelnummer:
- 180-7298
- Tillv. art.nr:
- SI4900DY-T1-E3
- Tillverkare / varumärke:
- Vishay
Antal (1 rulle med 2500 enheter)*
10 202,50 kr
(exkl. moms)
12 752,50 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 5 000 enhet(er), redo att levereras
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 + | 4,081 kr | 10 202,50 kr |
*vägledande pris
- RS-artikelnummer:
- 180-7298
- Tillv. art.nr:
- SI4900DY-T1-E3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5.3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.058Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.8mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Height | 1.35mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5.3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.058Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 3.1W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 4.8mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Height 1.35mm | ||
Width 4 mm | ||
Automotive Standard No | ||
The Vishay Siliconix SI4900DY series TrenchFET dual N channel power MOSFET has drain to source voltage of 60 V. It is used in LCD TV and CCFL inverter.
Pb-free
Halogen free
relaterade länkar
- Vishay TrenchFET Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin SO-8 SI4900DY-T1-E3
- Vishay Dual TrenchFET 2 Type P 5.3 A 8-Pin SO-8
- Vishay Dual TrenchFET 2 Type P 5.3 A 8-Pin SO-8 SI4559ADY-T1-E3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SI4946BEY-T1-E3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SiR188DP-T1-RE3
- Vishay Isolated TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC SI9945BDY-T1-GE3