Vishay TrenchFET Type N-Channel MOSFET, 9.5 A, 80 V Enhancement, 8-Pin SO-8

RS-artikelnummer:: 180-7296
Tillv. art.nr:: SI4896DY-T1-E3
Tillverkare / varumärke:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 9.5 A, 80 V Enhancement, 8-Pin SO-8

Antal (1 rulle med 2500 enheter)*

31 840,00 kr

(exkl. moms)

39 800,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Leverans från den 21 augusti 2026

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Enheter	Per enhet	Per rulle*
2500 +	12,736 kr	31 840,00 kr

*vägledande pris

RS-artikelnummer:: 180-7296
Tillv. art.nr:: SI4896DY-T1-E3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9.5A
	Maximum Drain Source Voltage Vds	80V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.1V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	34nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.56W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.75mm
	Length	5mm
	Width	6.2 mm
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9.5A
	Maximum Drain Source Voltage Vds 80V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.1V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 34nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.56W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.75mm
	Length 5mm
	Width 6.2 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 16.5mohm at a gate-source voltage of 10V. It has power dissipation of 1.56W and continuous drain current of 6.7A. The minimum and a maximum driving voltage for this MOSFET is 6V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switch

• Load switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21