Vishay TrenchFET Type P-Channel MOSFET, 3.8 A, 200 V, 8-Pin PowerPAK 1212-8 SI7119DN-T1-GE3
- RS-artikelnummer:
- 180-7820
- Tillv. art.nr:
- SI7119DN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
93,97 kr
(exkl. moms)
117,46 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 8 790 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 9,397 kr | 93,97 kr |
| 100 - 240 | 8,926 kr | 89,26 kr |
| 250 - 490 | 6,765 kr | 67,65 kr |
| 500 - 990 | 6,104 kr | 61,04 kr |
| 1000 + | 5,174 kr | 51,74 kr |
*vägledande pris
- RS-artikelnummer:
- 180-7820
- Tillv. art.nr:
- SI7119DN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.8A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.1Ω | |
| Typical Gate Charge Qg @ Vgs | 10.6nC | |
| Minimum Operating Temperature | 50°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 52W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.07mm | |
| Width | 3.3 mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.8A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.1Ω | ||
Typical Gate Charge Qg @ Vgs 10.6nC | ||
Minimum Operating Temperature 50°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 52W | ||
Maximum Operating Temperature 150°C | ||
Height 1.07mm | ||
Width 3.3 mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 200V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 1050mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 52W and continuous drain current of 3.8A. This product has been optimized for lower switching and conduction losses. It has applications in the active clamp in intermediate DC/DC power supplies. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Low thermal resistance powerpak package with small size and low 1.07 mm profile
• Maximum dissipation power 52W
• Operating temperature ranges between -50°C and 150°C
• TrenchFET power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested
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