Vishay TrenchFET Type N-Channel MOSFET, 3.1 A, 100 V Enhancement, 3-Pin SOT-23 SI2392ADS-T1-GE3

RS-artikelnummer:: 180-7811
Tillv. art.nr:: SI2392ADS-T1-GE3
Tillverkare / varumärke:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 3.1 A, 100 V Enhancement, 3-Pin SOT-23 SI2392ADS-T1-GE3

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Antal (1 förpackning med 20 enheter)*

91,62 kr

(exkl. moms)

114,52 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Slutlig(a) 1 380 enhet(er), redo att levereras

Enheter	Per enhet	Per förpackning*
20 - 180	4,581 kr	91,62 kr
200 - 480	3,439 kr	68,78 kr
500 - 980	2,979 kr	59,58 kr
1000 - 1980	2,755 kr	55,10 kr
2000 +	2,151 kr	43,02 kr

*vägledande pris

RS-artikelnummer:: 180-7811
Tillv. art.nr:: SI2392ADS-T1-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.1A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SOT-23
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	189mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	2.9nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.6W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Height	1.12mm
	Width	2.64 mm
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.1A
	Maximum Drain Source Voltage Vds 100V
	Package Type SOT-23
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 189mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 2.9nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.6W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Height 1.12mm
	Width 2.64 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source resistance of 126mohm at a gate-source voltage of 10V. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. The MOSFET has a minimum and a maximum driving voltage of 4.5V and 10V respectively. It has continuous drain current of 3.1A and maximum power dissipation of 2.5W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Boost converters

• DC/DC converters

• LED backlighting in LCD TVs

• Load switch

• Power management for mobile computing

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested