Vishay Siliconix TrenchFET Type N-Channel MOSFET, 2 A, 60 V Enhancement, 3-Pin SOT-23 SQ2364EES-T1_GE3
- RS-artikelnummer:
- 178-3877
- Tillv. art.nr:
- SQ2364EES-T1_GE3
- Tillverkare / varumärke:
- Vishay Siliconix
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
147,725 kr
(exkl. moms)
184,65 kr
(inkl. moms)
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- 250 enhet(er) är redo att levereras
- Dessutom levereras 3 025 enhet(er) från den 23 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 75 | 5,909 kr | 147,73 kr |
| 100 - 475 | 4,175 kr | 104,38 kr |
| 500 - 975 | 3,486 kr | 87,15 kr |
| 1000 + | 2,957 kr | 73,93 kr |
*vägledande pris
- RS-artikelnummer:
- 178-3877
- Tillv. art.nr:
- SQ2364EES-T1_GE3
- Tillverkare / varumärke:
- Vishay Siliconix
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2nC | |
| Maximum Power Dissipation Pd | 3W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2nC | ||
Maximum Power Dissipation Pd 3W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 175°C | ||
Length 3.04mm | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
RoHS-status: Undantagen
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 8V. It has drain-source resistance of 240mohms at a gate-source voltage of 4.5V. It has a maximum power dissipation of 3W and continuous drain current of 2A. It has a minimum and a maximum driving voltage of 1.5V and 4.5V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
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