Vishay TrenchFET Type N-Channel MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SQ2308CES-T1_GE3

RS-artikelnummer:: 180-7943
Tillv. art.nr:: SQ2308CES-T1_GE3
Tillverkare / varumärke:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SQ2308CES-T1_GE3

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119,40 kr

(exkl. moms)

149,20 kr

(inkl. moms)

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26 280 enhet(er) levereras från den 29 december 2025

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Enheter	Per enhet	Per förpackning*
20 - 180	5,97 kr	119,40 kr
200 - 480	4,771 kr	95,42 kr
500 - 980	4,172 kr	83,44 kr
1000 - 1980	3,528 kr	70,56 kr
2000 +	3,226 kr	64,52 kr

*vägledande pris

RS-artikelnummer:: 180-7943
Tillv. art.nr:: SQ2308CES-T1_GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	164mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2W
	Typical Gate Charge Qg @ Vgs	3.5nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Height	1.12mm
	Length	3.04mm
	Standards/Approvals	No
	Width	2.64 mm
	Automotive Standard	AEC-Q101

	Välj alla
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 164mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2W
	Typical Gate Charge Qg @ Vgs 3.5nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Height 1.12mm
	Length 3.04mm
	Standards/Approvals No
	Width 2.64 mm
	Automotive Standard AEC-Q101

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 150mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 2W and continuous drain current of 2.3A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

• Typical ESD performance 1500V

Applications

• Adaptor switch

• DC/DC converter

• Load switch

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested