Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3

RS-artikelnummer:: 180-7990
Tillv. art.nr:: SQ2309ES-T1_GE3
Tillverkare / varumärke:: Vishay

Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3

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Antal (1 förpackning med 20 enheter)*

116,70 kr

(exkl. moms)

145,88 kr

(inkl. moms)

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Slutlig(a) 380 enhet(er), redo att levereras

Enheter	Per enhet	Per förpackning*
20 - 180	5,835 kr	116,70 kr
200 - 480	4,665 kr	93,30 kr
500 - 980	3,50 kr	70,00 kr
1000 - 1980	2,923 kr	58,46 kr
2000 +	2,627 kr	52,54 kr

*vägledande pris

RS-artikelnummer:: 180-7990
Tillv. art.nr:: SQ2309ES-T1_GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Product Type	TrenchFET Power MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	1.7A
	Maximum Drain Source Voltage Vds	60V
	Series	TrenchFET
	Package Type	TO-236
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.335Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	8.5nC
	Maximum Power Dissipation Pd	2W
	Maximum Operating Temperature	175°C
	Width	2.64 mm
	Height	1.12mm
	Standards/Approvals	AEC-Q101, IEC 61249-2-21, RoHS (2002/95/EC)
	Length	3.04mm
	Automotive Standard	AEC-Q101

	Välj alla
	Brand Vishay
	Product Type TrenchFET Power MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 1.7A
	Maximum Drain Source Voltage Vds 60V
	Series TrenchFET
	Package Type TO-236
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.335Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 8.5nC
	Maximum Power Dissipation Pd 2W
	Maximum Operating Temperature 175°C
	Width 2.64 mm
	Height 1.12mm
	Standards/Approvals AEC-Q101, IEC 61249-2-21, RoHS (2002/95/EC)
	Length 3.04mm
	Automotive Standard AEC-Q101

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 15.5mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 136W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• Package with low thermal resistance

• TrenchFET power MOSFET

Applications

• Adaptor switch

• Load switches

Certifications

• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested