Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23
- RS-artikelnummer:
- 180-7397
- Tillv. art.nr:
- SQ2309ES-T1_GE3
- Tillverkare / varumärke:
- Vishay
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- RS-artikelnummer:
- 180-7397
- Tillv. art.nr:
- SQ2309ES-T1_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | TrenchFET Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | TO-236 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.335Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.12mm | |
| Length | 3.04mm | |
| Width | 2.64 mm | |
| Standards/Approvals | AEC-Q101, IEC 61249-2-21, RoHS (2002/95/EC) | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type TrenchFET Power MOSFET | ||
Maximum Continuous Drain Current Id 1.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type TO-236 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.335Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 1.12mm | ||
Length 3.04mm | ||
Width 2.64 mm | ||
Standards/Approvals AEC-Q101, IEC 61249-2-21, RoHS (2002/95/EC) | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 15.5mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 136W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• Package with low thermal resistance
• TrenchFET power MOSFET
Applications
• Adaptor switch
• Load switches
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
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