Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SOIC

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9 168,00 kr

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11 460,00 kr

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RS-artikelnummer:
168-8757
Tillv. art.nr:
IRF7103TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

50V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

200mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

12nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Width

4 mm

Standards/Approvals

No

Length

5mm

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

No

Infineon HEXFET Series MOSFET, 3A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7103TRPBF


This MOSFET is designed for efficient performance across various applications. Its Durable construction is particularly beneficial in circuits requiring effective power management, making it suitable for electrical and automation sectors. With a maximum drain-source voltage of 50V, it ensures reliable switching capabilities to meet application demands.

Features & Benefits


• Low Rds(on) of 200mΩ for improved efficiency

• Maximum continuous drain current of 3A enhances power handling

• Operational temperatures up to +150°C for increased reliability

• Wide gate threshold range of 1V to 3V for flexible control

• Dual isolated transistor configuration aids circuit integration

• Surface mount design simplifies PCB assembly and optimises space

Applications


• Used in power supply designs for energy-efficient operation

• Integrated into motor drive for efficient motor control

• Employed in switching power supplies for improved performance

• Suitable for automation systems needing dependable switching components

What is the recommended operating temperature range for this component?


The component operates efficiently within a temperature range of -55°C to +150°C, ensuring reliability in various environments.

How does one determine the suitable gate voltage for optimal performance?


The acceptable gate-source voltage varies from -20V to +20V, providing flexibility in control circuit designs. For best results, operating near 10V is recommended, as indicated by typical gate charge specifications.

What safety precautions should be taken when using this device?


It is important to not exceed the voltage and current ratings during operation to avoid potential failure or damage. Moreover, appropriate heatsinking may be necessary to maintain optimal operating temperatures under heavy loads.

Can it be used in circuits requiring fast switching?


Yes, this MOSFET is designed for fast switching capabilities, making it well-suited for applications requiring high-speed performance, such as PWM control in motor drivers.

Is this MOSFET compatible with standard PCB layouts?


The surface mount design complies with standard PCB layouts, facilitating integration into existing circuits with minimal adjustments for placement.

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