onsemi Isolated 2 Type N-Channel Power MOSFET, 115 mA, 60 V Enhancement, 6-Pin SC-70

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2 700,00 kr

(exkl. moms)

3 360,00 kr

(inkl. moms)

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RS-artikelnummer:
166-1841
Tillv. art.nr:
2N7002DW
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

115mA

Maximum Drain Source Voltage Vds

60V

Package Type

SC-70

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

13.5Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

200mW

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Standards/Approvals

No

Length

2mm

Height

1mm

Width

1.25 mm

Number of Elements per Chip

2

Automotive Standard

No

The 2N7002DW is a Dual N-channel general purpose MOSFET. It features low-on resistance and low gate threshold voltage. It also features fast switching speed and is available in an ultra-small surface mount package. This Dual N-channel MOSFET is typically used in all general purpose applications, but it is commonly used in motor controls and PMF’s (Power Management Functions).

Features and benefits:


• Dual N-Channel

• Low on resistance

• Low gate threshold

• Fast switching speed

• Low input & output leak

Enhancement Mode Dual MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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