Infineon OptiMOS FD Type N-Channel MOSFET, 84 A, 200 V Enhancement, 3-Pin TO-263

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RS-artikelnummer:
166-0877
Tillv. art.nr:
IPB117N20NFDATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

84A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS FD

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

65nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

170°C

Standards/Approvals

IEC61249-2-21, JEDEC, Pb-free lead plating, RoHS

Length

10.31mm

Height

4.57mm

Width

9.45 mm

Automotive Standard

No

RoHS-status: Inte relevant

COO (Country of Origin):
MY

Infineon OptiMOS™ FD Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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