Infineon OptiMOS 3 Type N-Channel MOSFET, 34 A, 200 V Enhancement, 3-Pin TO-263

Se alla MOSFETs

Antal (1 rulle med 1000 enheter)*

14 717,00 kr

(exkl. moms)

18 396,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • 1 000 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
1000 +14,717 kr14 717,00 kr

*vägledande pris

RS-artikelnummer:
911-4868
Tillv. art.nr:
IPB320N20N3GATMA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

32mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

136W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

22nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

9.45 mm

Standards/Approvals

No

Height

4.57mm

Length

10.31mm

Automotive Standard

No

COO (Country of Origin):
DE

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

relaterade länkar