N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1

RS-artikelnummer:: 754-5434
Tillv. art.nr:: IPB107N20N3GATMA1
Tillverkare / varumärke:: Infineon

N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1

821 I lager för avsändande samma dag

Pris (ex. moms) Varje

106,80 kr

(exkl. moms)

133,50 kr

(inkl. moms)

Enheter	Per enhet
1 - 9	106,80 kr
10 - 24	96,14 kr
25 - 49	90,82 kr
50 - 99	84,49 kr
100 +	78,01 kr

RS-artikelnummer:: 754-5434
Tillv. art.nr:: IPB107N20N3GATMA1
Tillverkare / varumärke:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	88 A
Maximum Drain Source Voltage	200 V
Series	OptiMOS™
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	11 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.31mm
Typical Gate Charge @ Vgs	65 nC @ 10 V
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Width	9.45mm
Minimum Operating Temperature	-55 °C
Height	4.57mm

N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over