Infineon OptiMOS Type N-Channel MOSFET, 88 A, 200 V Enhancement, 3-Pin TO-263 IPB107N20N3GATMA1
- RS-artikelnummer:
- 754-5434
- Tillv. art.nr:
- IPB107N20N3GATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 enhet)*
84,21 kr
(exkl. moms)
105,26 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 712 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 9 | 84,21 kr |
| 10 - 24 | 75,82 kr |
| 25 - 49 | 71,68 kr |
| 50 - 99 | 66,53 kr |
| 100 + | 61,38 kr |
*vägledande pris
- RS-artikelnummer:
- 754-5434
- Tillv. art.nr:
- IPB107N20N3GATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 88A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.31mm | |
| Height | 4.57mm | |
| Width | 9.45 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 88A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.31mm | ||
Height 4.57mm | ||
Width 9.45 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
relaterade länkar
- Infineon OptiMOS Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS FD Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IPP110N20N3GXKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IPB320N20N3GATMA1
- Infineon OptiMOS FD Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IPB117N20NFDATMA1
- Infineon OptiMOS 6 Type N-Channel Single MOSFETs 200 V Enhancement, 3-Pin TO-263 IPB175N20NM6ATMA1