Infineon OptiMOS FD Type N-Channel MOSFET, 61 A, 250 V Enhancement, 3-Pin TO-220

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RS-artikelnummer:
145-8744
Tillv. art.nr:
IPP220N25NFDAKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

61A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-220

Series

OptiMOS FD

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

65nC

Maximum Operating Temperature

175°C

Width

4.57 mm

Length

10.36mm

Standards/Approvals

No

Height

15.95mm

Automotive Standard

No

RoHS-status: Inte relevant

COO (Country of Origin):
CN

Infineon OptiMOS FD Series MOSFET, 61A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IPP220N25NFDAKSA1


This MOSFET is designed for high-performance applications that require efficient power management. With its N-channel enhancement mode configuration and robust specifications, it plays an essential role in sectors such as automation, electronics, and electrical systems. It offers a maximum continuous drain current of 61A and a breakdown voltage of 250V, providing reliability and thermal performance in challenging environments.

Features & Benefits


• Low on-resistance increases energy efficiency during operation

• High current capability supports a range of applications

• Elevated operating temperature of up to +175°C enhances versatility

• Optimised for hard commutation, contributing to ruggedness and durability

• Compliant with RoHS and halogen-free regulations, promoting eco-friendliness

• Efficient gate charge characteristics ensure effective switching

Applications


• Used in power conversion circuits for automation equipment

• Ideal for high-power motor drives in industrial machinery

• Commonly applied in power supplies for electronic devices

• Suitable for automotive power management systems

• Employed in renewable energy systems for inverters

What is the maximum power dissipation capacity?


It can handle a maximum power dissipation of 300W, ensuring performance in high load scenarios.

How does it perform in high-temperature environments?


This MOSFET can operate continuously at temperatures reaching +175°C, suitable for extreme conditions.

Can it handle pulsed drain currents?


Yes, the device can manage pulsed drain currents up to 244A, beneficial for transient load applications.

What is the significance of its low Rds(on) value?


A low Rds(on) of 22mΩ reduces power loss and increases efficiency during operation, Crucial for energy-sensitive applications.

How should it be mounted for optimal performance?


The device features a TO-220 package and is designed for through-hole mounting, which aids thermal management in circuit designs.

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