Infineon OptiMOS-T2 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 3-Pin TO-252

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27 030,00 kr

(exkl. moms)

33 787,50 kr

(inkl. moms)

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2500 +10,812 kr27 030,00 kr

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RS-artikelnummer:
166-0799
Tillv. art.nr:
IPD100N04S402ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS-T2

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

91nC

Maximum Operating Temperature

175°C

Length

6.73mm

Standards/Approvals

No

Height

2.41mm

Width

6.22 mm

Automotive Standard

AEC-Q101

RoHS-status: Inte relevant

COO (Country of Origin):
MY

Infineon OptiMOS™ T2 Power MOSFETs


Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode

AEC qualified

MSL1 up to 260°C Peak reflow

175°C operating temperature

Green Product (RoHS compliant)

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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