Infineon OptiMOS-T2 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 3-Pin TO-252 IPD100N04S402ATMA1

RS-artikelnummer:: 110-7111
Tillv. art.nr:: IPD100N04S402ATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS-T2 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 3-Pin TO-252 IPD100N04S402ATMA1

Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

190,00 kr

(exkl. moms)

237,50 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Tillfälligt slut

Leverans från den 30 mars 2026

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet	Per förpackning*
10 - 40	19,00 kr	190,00 kr
50 - 90	18,054 kr	180,54 kr
100 - 240	17,674 kr	176,74 kr
250 - 490	16,531 kr	165,31 kr
500 +	15,389 kr	153,89 kr

*vägledande pris

RS-artikelnummer:: 110-7111
Tillv. art.nr:: IPD100N04S402ATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	40V
	Series	OptiMOS-T2
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	91nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	150W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Height	2.41mm
	Standards/Approvals	No
	Length	6.73mm
	Width	6.22 mm
	Automotive Standard	AEC-Q101

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 40V
	Series OptiMOS-T2
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 91nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 150W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Height 2.41mm
	Standards/Approvals No
	Length 6.73mm
	Width 6.22 mm
	Automotive Standard AEC-Q101

RoHS-status: Inte relevant

Infineon OptiMOS™ T2 Power MOSFETs

Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode

AEC qualified

MSL1 up to 260°C Peak reflow

175°C operating temperature

Green Product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS-T2 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 3-Pin TO-252 IPD100N04S402ATMA1

GRATIS leverans för online beställningar över 500,00 kr

Infineon OptiMOS™ T2 Power MOSFETs

MOSFET Transistors, Infineon

relaterade länkar