Infineon OptiMOS Type N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252
- RS-artikelnummer:
- 165-5971
- Tillv. art.nr:
- IPD30N08S2L21ATMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 2500 enheter)*
19 520,00 kr
(exkl. moms)
24 400,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 30 mars 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 + | 7,808 kr | 19 520,00 kr |
*vägledande pris
- RS-artikelnummer:
- 165-5971
- Tillv. art.nr:
- IPD30N08S2L21ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | OptiMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 136W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series OptiMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 136W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Height 2.41mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
RoHS-status: Inte relevant
- COO (Country of Origin):
- CN
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C Peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
relaterade länkar
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-252 IPD30N08S2L21ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IPD30N06S215ATMA2
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IPD30N06S223ATMA2
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IPD30N06S2L13ATMA4
- Infineon OptiMOS-T Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET & Diode 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
