Vishay Si3476DV Type N-Channel MOSFET, 4.6 A, 80 V Enhancement, 6-Pin SOT-23 SI3476DV-T1-GE3
- RS-artikelnummer:
- 152-6369
- Tillv. art.nr:
- SI3476DV-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
128,70 kr
(exkl. moms)
160,875 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 8 750 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 225 | 5,148 kr | 128,70 kr |
| 250 - 600 | 4,838 kr | 120,95 kr |
| 625 - 1225 | 4,377 kr | 109,43 kr |
| 1250 - 2475 | 4,117 kr | 102,93 kr |
| 2500 + | 3,862 kr | 96,55 kr |
*vägledande pris
- RS-artikelnummer:
- 152-6369
- Tillv. art.nr:
- SI3476DV-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | Si3476DV | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.093Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 4.9nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 3.6W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 3.1mm | |
| Width | 1.7 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series Si3476DV | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.093Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 4.9nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 3.6W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 3.1mm | ||
Width 1.7 mm | ||
Automotive Standard No | ||
TrenchFET® Power MOSFET
Material categorization:
APPLICATIONS
Load Switch for Portable Applications
LED Backlight Switch
DC/DC Converter
Boost Converter
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