IXYS HiperFET Type N-Channel MOSFET, 170 A, 650 V Enhancement, 4-Pin SOT-227

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650,63 kr

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813,29 kr

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RS-artikelnummer:
146-4405
Tillv. art.nr:
IXFN170N65X2
Tillverkare / varumärke:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

170A

Maximum Drain Source Voltage Vds

650V

Series

HiperFET

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

13mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

434nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

1.17kW

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Height

9.6mm

Length

38.23mm

Standards/Approvals

No

Width

25.07 mm

Automotive Standard

No

IXYS Corporation (NASDAQ: IXYS), a global manufacturer of Power Semiconductors and integrated circuits (ICs) for energy efficiency, power management, transportation, medical, and motor control applications, announces an expansion of its Ultra Junction Power MOSFET product line: 650V X2-Class Power MOSFETs with fast body diodes. With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these devices are optimized for soft-switching resonant-mode power conversion applications.The intrinsic fast body diodes HiPerFETs™ of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency. Like other Ultra Junction MOSFETs from IXYS, these new devices have been developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced on-resistance and gate charge. They also exhibit a superior dv/dt performance and are avalanche rated as well. Thanks to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.Suitable applications include resonant-mode power supplies, high intensity discharge (HID) lamp ballast, AC and DC motor drives, DC-DC converters, robotic and servo control, battery chargers, 3-level solar inverters, and LED lighting.These new 650V X2 Power MOSFETs with HiPerFET™ body diodes are available in the following international standard size packages: TO-220, TO-263, SOT-227, TO-247, PLUS247, TO-264, and PLUS264. Some example part numbers include IXFA22N65X2, IXFH46N65X2, IXFK120N65X2, and IXFN150N65X2, with drain current ratings of 22A, 34A, 120A, and 145A, respectively.

Low RDS(ON) and Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

Resonant mode power supplies

High intensity discharge (HID) lamp ballast

AC and DC motor drives

DC-DC converters

Robotic and servo control

Battery chargers

3-level solar inverters

LED lighting

Unmanned Aerial Vehicles (UAVs)

Higher efficiency

High power density

Easy to mount

Space savings

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