IXYS HiperFET Type N-Channel MOSFET, 110 A, 850 V Enhancement, 4-Pin SOT-227 IXFN110N85X

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8 260,67 kr

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10 325,84 kr

(inkl. moms)

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RS-artikelnummer:
146-4249
Tillv. art.nr:
IXFN110N85X
Tillverkare / varumärke:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

850V

Package Type

SOT-227

Series

HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

425nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

1.17kW

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Length

38.23mm

Height

9.6mm

Width

25.07 mm

Standards/Approvals

No

Automotive Standard

No

The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.

Ultra low on-resistance RDS(ON) and gate charge Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

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