onsemi BSS138W Type N-Channel MOSFET, 210 mA, 50 V Enhancement, 3-Pin SC-70
- RS-artikelnummer:
- 146-2168
- Tillv. art.nr:
- BSS138W
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 rulle med 3000 enheter)*
1 992,00 kr
(exkl. moms)
2 490,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 15 000 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 - 3000 | 0,664 kr | 1 992,00 kr |
| 6000 - 12000 | 0,631 kr | 1 893,00 kr |
| 15000 + | 0,598 kr | 1 794,00 kr |
*vägledande pris
- RS-artikelnummer:
- 146-2168
- Tillv. art.nr:
- BSS138W
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 210mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SC-70 | |
| Series | BSS138W | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 340mW | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.9mm | |
| Width | 1.25 mm | |
| Length | 2mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 210mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SC-70 | ||
Series BSS138W | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 340mW | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.9mm | ||
Width 1.25 mm | ||
Length 2mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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