onsemi BSS138W Type N-Channel MOSFET, 210 mA, 50 V Enhancement, 3-Pin SC-70 BSS138W
- RS-artikelnummer:
- 903-4112
- Tillv. art.nr:
- BSS138W
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 100 enheter)*
105,30 kr
(exkl. moms)
131,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 15 900 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 100 - 400 | 1,053 kr | 105,30 kr |
| 500 - 900 | 0,907 kr | 90,70 kr |
| 1000 + | 0,786 kr | 78,60 kr |
*vägledande pris
- RS-artikelnummer:
- 903-4112
- Tillv. art.nr:
- BSS138W
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 210mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | BSS138W | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 340mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 1.1nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Width | 1.25 mm | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-44-720 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 210mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Series BSS138W | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 340mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 1.1nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Width 1.25 mm | ||
Standards/Approvals No | ||
Length 2mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-44-720 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
relaterade länkar
- onsemi BSS138W Type N-Channel MOSFET 50 V Enhancement, 3-Pin SC-70
- DiodesZetex BSS138W Type N-Channel MOSFET 50 V Enhancement, 3-Pin SC-70 BSS138W-7-F
- DiodesZetex BSS138W Type N-Channel MOSFET 50 V Enhancement, 3-Pin SC-70
- onsemi 2N7002W Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-70
- onsemi 2N7002W Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-70 2N7002WT1G
- onsemi Isolated 2 Type N-Channel Power MOSFET 60 V Enhancement, 6-Pin SC-70
- onsemi Isolated 2 Type N-Channel Power MOSFET 60 V Enhancement, 6-Pin SC-70 2N7002DW
- onsemi PowerTrench N-Channel MOSFET 25 V, 6-Pin SOT-363 (SC-70) FDG313N
