onsemi 2N7002W Type N-Channel MOSFET, 340 mA, 60 V Enhancement, 3-Pin SC-70 2N7002WT1G
- RS-artikelnummer:
- 780-0472
- Tillv. art.nr:
- 2N7002WT1G
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 100 enheter)*
65,10 kr
(exkl. moms)
81,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 4 100 enhet(er) från den 29 december 2025
- Dessutom levereras 6 000 enhet(er) från den 24 juni 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 100 - 400 | 0,651 kr | 65,10 kr |
| 500 - 900 | 0,56 kr | 56,00 kr |
| 1000 + | 0,486 kr | 48,60 kr |
*vägledande pris
- RS-artikelnummer:
- 780-0472
- Tillv. art.nr:
- 2N7002WT1G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 340mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7002W | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Forward Voltage Vf | 0.88V | |
| Maximum Power Dissipation Pd | 330mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.2mm | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Width | 1.35 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 340mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7002W | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Forward Voltage Vf 0.88V | ||
Maximum Power Dissipation Pd 330mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 2.2mm | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Width 1.35 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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